Reaction sintered SiC


	$Refractories$

Reaction Bonded Silicon Carbide

Application:

	thermocouple protection tube
	electronic substrate and heat sink

Typical Properties

Use temperature, °C	1380
Density, g/cm³	> 3.02
Porosity, %	< 0.1
Bending Strength, MPa (at 20 °C) (at 1200 °C)	250
Bending Strength, MPa (at 20 °C) (at 1200 °C)	280
Elastic Modulus, GPa (at 20 °C) (at 1200 °C)	330
Elastic Modulus, GPa (at 20 °C) (at 1200 °C)	300
Thermal Conductivity, W/m•K (at 1200 °C)	45
Thermal Expansion Coefficient, E-6 K^-1	4.5
Moh's hardness	13